Invention Grant
- Patent Title: Split gate non-volatile memory cell
- Patent Title (中): 分闸门非易失性存储单元
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Application No.: US12103451Application Date: 2008-04-15
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Publication No.: US07939880B2Publication Date: 2011-05-10
- Inventor: Sung-Taeg Kang , Rode R. Mora
- Applicant: Sung-Taeg Kang , Rode R. Mora
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
A non-volatile memory (NVM) cell comprising a layer of discrete charge storing elements, a control gate, and a select gate is provided. The control gate has a first sidewall with a lower portion being at least a first angle 10 degrees away from 90 degrees with respect to substrate. Further, the select gate has a second sidewall with a lower portion being at least a second angle at least 10 degrees away from 90 degrees with respect to the substrate. The NVM cell further comprises a layer of dielectric material located between the first sidewall and the second sidewall.
Public/Granted literature
- US20090256186A1 SPLIT GATE NON-VOLATILE MEMORY CELL Public/Granted day:2009-10-15
Information query
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