Invention Grant
- Patent Title: Integration of sense FET into discrete power MOSFET
- Patent Title (中): 将感应FET集成到分立功率MOSFET中
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Application No.: US12870489Application Date: 2010-08-27
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Publication No.: US07939882B2Publication Date: 2011-05-10
- Inventor: Yi Su , Anup Bhalla
- Applicant: Yi Su , Anup Bhalla
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agency: JDI Patent
- Agent Joshua D. Isenberg
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A semiconductor device includes a main field effect transistor (FET) and one or more sense FETs. A transistor portion of the sense FET is surrounded by transistors of the main FET. An electrical isolation structure that surrounds the main FET is configured to electrically isolate source and body regions of the main FET from source and body regions of the sense FET. A sense FET source pad is located at an edge of the main FET and spaced apart from the transistor portion of the sense FET. The sense FET source pad is connected to the transistor portion of the sense FET by a sense FET probe metal. The isolation structure is configured such that the transistor portion of the sense FET and the sense FET source pad are located outside an active area of the main FET.
Public/Granted literature
- US20100320461A1 INTEGRATION OF SENSE FET INTO DISCRETE POWER MOSFET Public/Granted day:2010-12-23
Information query
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