Invention Grant
- Patent Title: Materials for the formation of polymer junction diodes
- Patent Title (中): 用于形成聚合物结二极管的材料
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Application No.: US12041884Application Date: 2008-03-04
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Publication No.: US07939900B2Publication Date: 2011-05-10
- Inventor: Qibing Pei
- Applicant: Qibing Pei
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agent John P. O'Banion
- Main IPC: H01L31/115
- IPC: H01L31/115

Abstract:
Polymerizable anions and/or cations can be used as the ionically conductive species for the formation of a p-i-n junction in conjugated polymer thin films. After the junction is formed, the ions are polymerized in situ, and the junction is locked thereafter. The resulting polymer p-i-n junction diodes could have a high current rectification ratio. Electroluminescence with high quantum efficiency and low operating voltage may be produced from this locked junction. The diodes may also be used for photovoltaic energy conversion. In a photovoltaic cell, the built-in potential helps separate electron-hole pairs and increases the open-circuit voltage.
Public/Granted literature
- US20080224089A1 MATERIALS FOR THE FORMATION OF POLYMER JUNCTION DIODES Public/Granted day:2008-09-18
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