Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12324449Application Date: 2008-11-26
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Publication No.: US07939904B2Publication Date: 2011-05-10
- Inventor: Kenji Kimoto
- Applicant: Kenji Kimoto
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JPP2005-172088 20050613
- Main IPC: H01L27/095
- IPC: H01L27/095

Abstract:
A semiconductor device has a semiconductor (e.g., a silicon substrate), an electrically conductive region (e.g., a source region and a drain region) which is in contact with the semiconductor to form a Schottky junction, and an insulator. The insulator is in contact with the semiconductor and the electrically conductive region, and has a fixed-charge containing region which contains a fixed charge and extends across a boundary between the semiconductor and the electrically conductive region.
Public/Granted literature
- US20090173973A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-07-09
Information query
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