Invention Grant
- Patent Title: Electrostatic discharge protection method and device for semiconductor device including an electrostatic discharge protection element providing a discharge path of a surge current
- Patent Title (中): 包括提供浪涌电流放电路径的静电放电保护元件的半导体器件的静电放电保护方法和装置
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Application No.: US11806779Application Date: 2007-06-04
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Publication No.: US07939905B2Publication Date: 2011-05-10
- Inventor: Takayuki Nagai
- Applicant: Takayuki Nagai
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn Intellectual Property Law Group, PLLC
- Priority: JP2006-162001 20060612
- Main IPC: H01L23/60
- IPC: H01L23/60
Abstract:
According to an embodiment of the present invention, an electrostatic breakdown protection method protects a semiconductor device from a surge current impressed between a first terminal and a second terminal, the semiconductor device including: a diode impressing a forward-bias current from the first terminal to the second terminal; and a bipolar transistor impressing a current in a direction from the second terminal to the first terminal under an ON state, a continuity between a collector terminal and an emitter terminal of the bipolar transistor being attained before a potential difference between the first terminal and the second terminal reaches such a level that the diode is broken down.
Public/Granted literature
- US20070284667A1 Electrostatic discharge protection method and device for semiconductor device Public/Granted day:2007-12-13
Information query
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