Invention Grant
- Patent Title: Semiconductor memory apparatus
- Patent Title (中): 半导体存储装置
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Application No.: US12396017Application Date: 2009-03-02
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Publication No.: US07939927B2Publication Date: 2011-05-10
- Inventor: Takashi Okada
- Applicant: Takashi Okada
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-049712 20080229
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/48

Abstract:
The semiconductor memory apparatus related to an embodiment of the present invention includes a wiring substrate arranged with a device mounting part and connection pads aligned along one exterior side of the wiring substrate, a plurality of semiconductor memory devices including electrode pads which are arranged along one external side of the wiring substrate, a semiconductor memory device group in which the plurality of semiconductor memory devices are stacked on the device mounting part of the wiring substrate so that pad arrangement sides all face in the same direction, and a controller device including the electrode pads arranged along at least one external side of the wiring substrate, wherein the electrode pads of the plurality of semiconductor memory devices and the electrode pads of the controller device are arranged parallel to an arrangement position of the connection pads of the wiring substrate.
Public/Granted literature
- US20090230534A1 SEMICONDUCTOR MEMORY APPARATUS Public/Granted day:2009-09-17
Information query
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