Invention Grant
- Patent Title: Semiconductor die having a redistribution layer
- Patent Title (中): 具有再分配层的半导体管芯
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Application No.: US12843279Application Date: 2010-07-26
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Publication No.: US07939944B2Publication Date: 2011-05-10
- Inventor: Chien-Ko Liao , Chin-Tien Chiu , Jack Chang Chien , Cheeman Yu , Hem Takiar
- Applicant: Chien-Ko Liao , Chin-Tien Chiu , Jack Chang Chien , Cheeman Yu , Hem Takiar
- Applicant Address: US CA Milpitas
- Assignee: SanDisk Corporation
- Current Assignee: SanDisk Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Vierra Magen Marcus & DeNiro LLP
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device having a redistribution layer, and methods of forming same, are disclosed. After fabrication of semiconductor die on a wafer, a tape assembly is applied onto a surface of the wafer, in contact with the surfaces of each semiconductor die on the wafer. The tape assembly includes a backgrind tape as a base layer, and a film assembly adhered to the backgrind tape. The film assembly in turn includes an adhesive film on which is deposited a thin layer of conductive material. The redistribution layer pattern is traced into the tape assembly, using for example a laser. Thereafter, the unheated portions of the tape assembly may be removed, leaving the heated redistribution layer pattern on each semiconductor die.
Public/Granted literature
- US20100289147A1 SEMICONDUCTOR DIE HAVING A REDISTRIBUTION LAYER Public/Granted day:2010-11-18
Information query
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