Invention Grant
US07939994B2 Micromechanical actuators comprising semiconductors on a group III nitride basis
有权
微机械致动器包括基于III族氮化物的半导体
- Patent Title: Micromechanical actuators comprising semiconductors on a group III nitride basis
- Patent Title (中): 微机械致动器包括基于III族氮化物的半导体
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Application No.: US12300831Application Date: 2007-05-16
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Publication No.: US07939994B2Publication Date: 2011-05-10
- Inventor: Mike Kunze , Ingo Daumiller
- Applicant: Mike Kunze , Ingo Daumiller
- Applicant Address: DE Ulm
- Assignee: Microgan GmbH
- Current Assignee: Microgan GmbH
- Current Assignee Address: DE Ulm
- Agency: Fay Kaplun & Marcin, LLP
- Priority: DE102006022940 20060517
- International Application: PCT/EP2007/004394 WO 20070516
- International Announcement: WO2007/131796 WO 20071122
- Main IPC: H01L41/053
- IPC: H01L41/053 ; H01L41/047

Abstract:
A semiconductor actuator includes a substrate base, a bending structure which is connected to the substrate base and can be deflected at least partially relative to the substrate base. The bending structure has semiconductor compounds on the basis of nitrides of main group III elements and at least two electrical supply contacts which impress an electrical current in or for applying an electrical voltage to the bending structure. At least two of the supply contacts are disposed at a spacing from each other respectively on the bending structure and/or integrated in the latter.
Public/Granted literature
- US20090174014A1 Micromechanical Actuators Comprising Semiconductors on a Group III Nitride Basis Public/Granted day:2009-07-09
Information query
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