Invention Grant
- Patent Title: Semiconductor start control device, method, and system
- Patent Title (中): 半导体启动控制装置,方法和系统
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Application No.: US12637197Application Date: 2009-12-14
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Publication No.: US07940094B2Publication Date: 2011-05-10
- Inventor: Atsushi Takeuchi
- Applicant: Atsushi Takeuchi
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox LLP
- Priority: JP2008-333268 20081226
- Main IPC: H03L7/00
- IPC: H03L7/00

Abstract:
A semiconductor device provided which includes: an external power supply detection circuit which detects that an external power supply is turned on and outputs a first detection signal; an internal power supply voltage generation circuit which generates an internal power supply voltage based on the external power supply; a reference voltage generation circuit which generates a first reference voltage in response to the first detection signal; a reference voltage detection circuit which detects that the first reference voltage reaches a given level and outputs a second detection signal; a bias voltage generation circuit which, in response to the second detection signal, generates a bias voltage based on a second reference voltage dependent on the first reference voltage; and a power supply voltage detection circuit which, in response to the second detection signal, compares the bias voltage with a third reference voltage and outputs a start signal.
Public/Granted literature
- US20100164565A1 SEMICONDUCTOR START CONTROL DEVICE, METHOD, AND SYSTEM Public/Granted day:2010-07-01
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