Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12797342Application Date: 2010-06-09
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Publication No.: US07940109B2Publication Date: 2011-05-10
- Inventor: Chang-Ho Do
- Applicant: Chang-Ho Do
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2006-0068123 20060720
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
A semiconductor device is capable of stably maintaining a voltage level of a shield line, even when a voltage level of an adjacent line is varied. The semiconductor device includes normal lines arranged for transfer of signals, a shield line arranged adjacently to the normal lines, a level shifting circuit for receiving an input signal swinging between a power supply voltage level and a ground voltage level, and shifting the input signal to an output signal swing between the power supply voltage level and a low voltage level lower than the ground voltage level by a predetermined level to output a shifted signal via the shield line, and a signal input unit for transferring the signal provided via the shield line to an output node.
Public/Granted literature
- US20100244923A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-09-30
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