Invention Grant
- Patent Title: Semiconductor device and offset voltage adjusting method
- Patent Title (中): 半导体器件和偏移电压调整方法
-
Application No.: US12179666Application Date: 2008-07-25
-
Publication No.: US07940114B2Publication Date: 2011-05-10
- Inventor: Jun Fukuhara , Tsuyoshi Mitsuda
- Applicant: Jun Fukuhara , Tsuyoshi Mitsuda
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2007-193086 20070725
- Main IPC: H01H37/76
- IPC: H01H37/76 ; H01H85/00

Abstract:
A semiconductor device includes a fuse section having a plurality of fuse circuits configured to generate switch control signals; and an offset adjusting section configured to adjust an offset voltage of a differential amplifier based on the switch control signals supplied from output nodes of the plurality of fuse circuits. Each of the plurality of fuse circuits includes a fuse connected between a first power supply voltage and a cut node; a current source connected between a second power supply voltage and the output node; and a first transistor connected between the output node and the cut node and having a gate connected to the second power supply voltage.
Public/Granted literature
- US20090027107A1 SEMICONDUCTOR DEVICE AND OFFSET VOLTAGE ADJUSTING METHOD Public/Granted day:2009-01-29
Information query