Invention Grant
- Patent Title: STRAM with electronically reflective insulative spacer
- Patent Title (中): STRAM带电子反射绝缘垫片
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Application No.: US12239887Application Date: 2008-09-29
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Publication No.: US07940551B2Publication Date: 2011-05-10
- Inventor: Yuankai Zheng , Dimitar V. Dimitrov , Wei Tian , Dexin Wang , Zheng Gao , Xiaobin Wang
- Applicant: Yuankai Zheng , Dimitar V. Dimitrov , Wei Tian , Dexin Wang , Zheng Gao , Xiaobin Wang
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology, LLC
- Current Assignee: Seagate Technology, LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Campbell Nelson Whipps LLC
- Main IPC: G11C11/16
- IPC: G11C11/16

Abstract:
Spin-transfer torque memory having a specular insulative spacer is disclosed. The spin-transfer torque memory unit includes a free magnetic layer, a reference magnetic layer, an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference magnetic layer, an electrode layer, and an electrically insulating and electronically reflective layer separating the electrode layer and the free magnetic layer.
Public/Granted literature
- US20100078743A1 STRAM WITH ELECTRONICALLY REFLECTIVE INSULATIVE SPACER Public/Granted day:2010-04-01
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