Invention Grant
- Patent Title: Semiconductor integrated circuit device minimizing leakage current
- Patent Title (中): 半导体集成电路器件使漏电流最小化
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Application No.: US11592978Application Date: 2006-11-06
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Publication No.: US07940577B2Publication Date: 2011-05-10
- Inventor: Kenjyu Shimogawa , Hiroshi Furuta
- Applicant: Kenjyu Shimogawa , Hiroshi Furuta
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2005-329692 20051115; JP2006-260834 20060926
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
The semiconductor integrated circuit device includes a voltage control circuit that generates a control voltage for deactivating a field effect transistor by a gate voltage. The voltage control circuit controls a voltage so as to substantially minimize the leakage current which flows when the field effect transistor is inactive with respect to a device temperature.
Public/Granted literature
- US20070109700A1 Semiconductor integrated circuit device Public/Granted day:2007-05-17
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