Invention Grant
US07940581B2 Method for low power sensing in a multi-port SRAM using pre-discharged bit lines
有权
使用预放电位线的多端口SRAM中的低功率感测方法
- Patent Title: Method for low power sensing in a multi-port SRAM using pre-discharged bit lines
- Patent Title (中): 使用预放电位线的多端口SRAM中的低功率感测方法
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Application No.: US12861026Application Date: 2010-08-23
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Publication No.: US07940581B2Publication Date: 2011-05-10
- Inventor: Igor Arsovski , Michael T. Fragano , Robert M. Houle
- Applicant: Igor Arsovski , Michael T. Fragano , Robert M. Houle
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Michael LeStrange
- Main IPC: G11C7/06
- IPC: G11C7/06
Abstract:
A method for sensing the contents of a memory cell within a static random access memory (SRAM) includes holding a bit line associated with the memory cell at a zero voltage potential when the memory cell is not being accessed; energizing the bit line to a first voltage potential different than the zero voltage potential during an access of the memory cell; and sensing the memory cell contents when the associated bit line has reached the first voltage potential.
Public/Granted literature
- US20100315894A1 Low Power Sensing In a Multi-Port Sram Using Pre-Discharged Bit Lines Public/Granted day:2010-12-16
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