Invention Grant
- Patent Title: Integrated circuit that stores defective memory cell addresses
- Patent Title (中): 存储缺陷存储单元地址的集成电路
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Application No.: US12134540Application Date: 2008-06-06
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Publication No.: US07940582B2Publication Date: 2011-05-10
- Inventor: Khaled Fekih-Romdhane
- Applicant: Khaled Fekih-Romdhane
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Agency: Dicke, Billig & Czaja, P.L.L.C.
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
An integrated circuit including an array of memory cells, a circuit, volatile storage, and non-volatile storage. The circuit is configured to detect defective memory cells in the array of memory cells and provide addresses of the defective memory cells. The volatile storage is configured to store the addresses, where each entry in the volatile storage includes one of the addresses and a volatile storage master bit. The non-volatile storage is configured to store the addresses, where each entry in the non-volatile storage includes one of the addresses and a non-volatile storage master bit.
Public/Granted literature
- US20090303814A1 INTEGRATED CIRCUIT THAT STORES DEFECTIVE MEMORY CELL ADDRESSES Public/Granted day:2009-12-10
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