Invention Grant
- Patent Title: Semiconductor photonic device
- Patent Title (中): 半导体光子器件
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Application No.: US12475688Application Date: 2009-06-01
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Publication No.: US07941025B2Publication Date: 2011-05-10
- Inventor: Kimio Shigihara
- Applicant: Kimio Shigihara
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2004-345415 20041130
- Main IPC: G02B6/10
- IPC: G02B6/10

Abstract:
A coating film is provided on an end surface of a semiconductor photonic element including an active layer through which light propagates. The coating film has a two-layer structure including a first layer film and a second layer film arranged in a stacked relation. The thicknesses of the first and second layer films are determined so that the value of the amplitude reflectivity of the coating film is equal to an imaginary number.
Public/Granted literature
- US20090237798A1 SEMICONDUCTOR PHOTONIC DEVICE Public/Granted day:2009-09-24
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