Invention Grant
- Patent Title: Memory system
- Patent Title (中): 内存系统
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Application No.: US11443031Application Date: 2006-05-31
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Publication No.: US07941730B2Publication Date: 2011-05-10
- Inventor: Toshio Ogawa , Yoshihiro Takemae , Yoshinori Okajima , Tetsuhiko Endo , Yasuro Matsuzaki
- Applicant: Toshio Ogawa , Yoshihiro Takemae , Yoshinori Okajima , Tetsuhiko Endo , Yasuro Matsuzaki
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox LLP
- Priority: JP2006-039851 20060216
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G06F13/14

Abstract:
A semiconductor memory has a field programmable unit in which logic to inter-convert external signals to be input/output to/from a memory system and internal signals to be input/output to/from a memory cell array is programmed. A program for constructing the logic of the field programmable unit is stored in a nonvolatile program memory unit. Through the field programmable unit, a controller can access the memory cell array, even when the interface of the controller accessing the semiconductor memory is different from an interface for accessing the memory cell array. Therefore, one kind of semiconductor memory can be used as plural kinds of semiconductor memories. This eliminates the need to develop plural kinds of semiconductor memories, reducing a development cost.
Public/Granted literature
- US20070192527A1 Memory system Public/Granted day:2007-08-16
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