Invention Grant
- Patent Title: Intersect area based ground rule for semiconductor design
- Patent Title (中): 半导体设计相交区域基准规则
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Application No.: US12105299Application Date: 2008-04-18
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Publication No.: US07941780B2Publication Date: 2011-05-10
- Inventor: Albrik Avanessian , Henry A. Bonges, III , Dureseti Chidambarrao , Stephen E. Greco , Douglas W. Kemerer , Tina Wagner
- Applicant: Albrik Avanessian , Henry A. Bonges, III , Dureseti Chidambarrao , Stephen E. Greco , Douglas W. Kemerer , Tina Wagner
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent H. Daniel Schnurmann
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A design rule that determines a degree of overlap between two design elements in two adjoining levels by estimating a physical overlap area, or an “intersect area,” of corresponding structures in a semiconductor chip is provided. The estimation of the physical intersect area may factor in line edge biasing, critical dimension tolerance, overlay tolerance, and corner rounding to provide an accurate estimate of a physical area for each of the structures corresponding to the two design elements. The intersect area is employed as a metric to determine compliance with a ground rule, i.e., the ground rule is specified in terms of the intersect region. Other derived quantities such as electrical resistance, electromigration resistance, expected yield may be calculated from the intersect area, and may be advantageously employed to optimize the design data.
Public/Granted literature
- US20090265673A1 INTERSECT AREA BASED GROUND RULE FOR SEMICONDUCTOR DESIGN Public/Granted day:2009-10-22
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