Invention Grant
US07943195B2 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants 有权
孔原子,孔隙前体和使用它们的方法提供具有低介电常数的多孔有机硅玻璃膜

Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
Abstract:
A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.
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