Invention Grant
US07947106B2 Sb-Te alloy powder for sintering, sintered compact sputtering target obtained by sintering said powder, and manufacturing method of Sb-Te alloy powder for sintering 有权
用于烧结的Sb-Te合金粉末,通过烧结所述粉末获得的烧结致密溅射靶,以及用于烧结的Sb-Te合金粉末的制造方法

  • Patent Title: Sb-Te alloy powder for sintering, sintered compact sputtering target obtained by sintering said powder, and manufacturing method of Sb-Te alloy powder for sintering
  • Patent Title (中): 用于烧结的Sb-Te合金粉末,通过烧结所述粉末获得的烧结致密溅射靶,以及用于烧结的Sb-Te合金粉末的制造方法
  • Application No.: US11813694
    Application Date: 2005-11-29
  • Publication No.: US07947106B2
    Publication Date: 2011-05-24
  • Inventor: Hideyuki Takahashi
  • Applicant: Hideyuki Takahashi
  • Applicant Address: JP Tokyo
  • Assignee: JX Nippon Mining & Metals Corporation
  • Current Assignee: JX Nippon Mining & Metals Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Howson & Howson LLP
  • Priority: JP2005-009784 20050118
  • International Application: PCT/JP2005/021851 WO 20051129
  • International Announcement: WO2006/077692 WO 20060727
  • Main IPC: B22F1/00
  • IPC: B22F1/00 C23C14/32
Sb-Te alloy powder for sintering, sintered compact sputtering target obtained by sintering said powder, and manufacturing method of Sb-Te alloy powder for sintering
Abstract:
Provided is Sb—Te alloy powder for sintering in which the maximum grain size of the powder obtained by subjecting gas atomized powder of an Sb—Te alloy to mechanical pulverization is 90 μm or less, and a sintered compact sputtering target obtained by sintering this powder. Further provided is a manufacturing method of Sb—Te alloy powder for a sintered compact sputtering target including the steps of dissolving an Sb—Te alloy, thereafter subjecting this to gas atomization to obtain atomized powder, and further subjecting this to mechanical pulverization in an inert atmosphere without any atmospheric exposure so as to manufacture powder having a maximum grain size of 90 μm or less and reduced oxygen content. Thus, the Sb—Te alloy sputtering target structure can be uniformalized and refined, generation of cracks in the sintered target can be inhibited, and generation of arcing during sputtering can be inhibited. Further, surface ruggedness caused by sputter erosion can be reduced in order to obtain a high quality Sb—Te alloy sputtering target.
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