Invention Grant
- Patent Title: Copper deposition chamber having integrated bevel clean with edge bevel removal detection
- Patent Title (中): 铜沉积室具有整体斜面清洁和边缘斜面去除检测
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Application No.: US12783391Application Date: 2010-05-19
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Publication No.: US07947131B2Publication Date: 2011-05-24
- Inventor: Chen-An Chen , Anh N. Nguyen , Manoocher Birang
- Applicant: Chen-An Chen , Anh N. Nguyen , Manoocher Birang
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan
- Main IPC: B08B7/04
- IPC: B08B7/04
Abstract:
Embodiments of the invention generally provide apparatus and method for detecting and controlling edge bevel removal of a semiconductor substrate. One embodiment of the present invention provides an apparatus for inspecting a rotating substrate. The apparatus comprises a substrate support configured to support the rotating substrate on a back side and rotate the substrate about a central axis, and a sensor positioned above the substrate support, the sensor being configured to inspect a front side of the rotating substrate while moving simultaneously radially across the substrate.
Public/Granted literature
- US20100218784A1 COPPER DEPOSITION CHAMBER HAVING INTEGRATED BEVEL CLEAN WITH EDGE BEVEL REMOVAL DETECTION Public/Granted day:2010-09-02
Information query
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