Invention Grant
- Patent Title: Method of manufacturing piezoelectric resonator
- Patent Title (中): 制造压电谐振器的方法
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Application No.: US11901511Application Date: 2007-09-18
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Publication No.: US07947187B2Publication Date: 2011-05-24
- Inventor: Takefumi Saito
- Applicant: Takefumi Saito
- Applicant Address: JP Tokyo
- Assignee: Nihon Dempa Kogyo Co., Ltd.
- Current Assignee: Nihon Dempa Kogyo Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Jordan and Hamburg LLP
- Priority: JP2006-256185 20060921
- Main IPC: H01L41/22
- IPC: H01L41/22

Abstract:
When forming an opening conforming to a groove of a quartz resonator in a metal film serving as a mask of the quartz resonator by conducting etching, the outer periphery of the metal film is wavingly etched. Therefore, when the groove is formed on the quartz resonator, the quartz resonator is formed according to the above-described metal film, which results in appearance defects or dimension defects. In order to solve the problems, the outer shape of the metal film is formed smaller than the outer shape of the quartz resonator before forming the opening conforming to the groove of the quartz resonator in the metal film, then etching of the metal film and etching of the quartz resonator are performed.
Public/Granted literature
- US20080073318A1 Method of manufacturing piezoelectric resonator Public/Granted day:2008-03-27
Information query
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