Invention Grant
US07947221B2 Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same 有权
应力诱导带隙偏移半导体光电/光催化/光伏表面及其制备方法

  • Patent Title: Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same
  • Patent Title (中): 应力诱导带隙偏移半导体光电/光催化/光伏表面及其制备方法
  • Application No.: US12604359
    Application Date: 2009-10-22
  • Publication No.: US07947221B2
    Publication Date: 2011-05-24
  • Inventor: John M. Guerra
  • Applicant: John M. Guerra
  • Agent David J. Cole
  • Main IPC: C02F1/32
  • IPC: C02F1/32 H01L31/042
Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same
Abstract:
Titania is a semiconductor and photocatalyst that is also chemically inert. With its bandgap of 3.0, to activate the photocatalytic property of titania requires light of about 390 nm wavelength, which is in the ultra-violet, where sunlight is very low in intensity. A method and devices are disclosed wherein stress is induced and managed in a thin film of titania in order to shift and lower the bandgap energy into the longer wavelengths that are more abundant in sunlight. Applications of this stress-induced bandgap-shifted titania photocatalytic surface include photoelectrolysis for production of hydrogen gas from water, photovoltaics for production of electricity, and photocatalysis for detoxification and disinfection.
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