A main object of the invention is to provide a reflective mask for EUV lithography, which may detect an alignment mark by transmission. The invention achieves the object by providing a reflective mask comprising a substrate, a multilayer formed on one side of the substrate, an intermediate layer formed on the multilayer, an absorber formed in pattern on the substrate on which the multilayer and the intermediate layer are formed, and a conductive layer formed on the other side of the substrate, wherein the pattern of the absorber constitutes a circuit pattern and an alignment mark, and in an alignment region where the alignment mark is provided, the other side of the substrate is exposed.