Invention Grant
- Patent Title: Defect inspecting method
- Patent Title (中): 缺陷检查方法
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Application No.: US12614030Application Date: 2009-11-06
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Publication No.: US07947515B2Publication Date: 2011-05-24
- Inventor: Kuniharu Nagashima
- Applicant: Kuniharu Nagashima
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2009-144189 20090617
- Main IPC: G01R31/26
- IPC: G01R31/26

Abstract:
A defect inspecting method includes: forming, in a first air pressure state, a film, which covers one opening of two openings provided on an upper surface of a substrate, on a tubular contact hole formed on the substrate in manufacturing a semiconductor device and formed in a tubular shape by connecting two cylindrical contact holes on bottom surface sides thereof, both ends of the tubular shape being opened in the openings; exposing the substrate covered with the film in a second air pressure state; and observing whether the film is deformed to thereby inspect whether the part of the tubular shape is blocked.
Public/Granted literature
- US20100323460A1 DEFECT INSPECTING METHOD Public/Granted day:2010-12-23
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