Invention Grant
- Patent Title: Method for producing a semiconductor including a foreign material layer
- Patent Title (中): 包含异物层的半导体的制造方法
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Application No.: US12164652Application Date: 2008-06-30
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Publication No.: US07947569B2Publication Date: 2011-05-24
- Inventor: Anton Mauder , Frank Pfirsch , Rudolf Berger , Stefan Sedlmaier , Wolfgang Lehnert , Raimund Foerg
- Applicant: Anton Mauder , Frank Pfirsch , Rudolf Berger , Stefan Sedlmaier , Wolfgang Lehnert , Raimund Foerg
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A method for producing a semiconductor including a material layer. In one embodiment a trench is produced having two opposite sidewalls and a bottom, in a semiconductor body. A foreign material layer is produced on a first one of the two sidewalls of the trench. The trench is filled by epitaxially depositing a semiconductor material onto the second one of the two sidewalls and the bottom of the trench.
Public/Granted literature
- US20090325361A1 METHOD FOR PRODUCING A SEMICONDUCTOR INCLUDING A MATERIAL LAYER Public/Granted day:2009-12-31
Information query
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