Invention Grant
- Patent Title: Method of manufacturing a semiconductor device having an intermetallic terminal pad and solder junction structure
- Patent Title (中): 制造具有金属间端子焊盘和焊接结结构的半导体器件的方法
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Application No.: US12230905Application Date: 2008-09-08
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Publication No.: US07947593B2Publication Date: 2011-05-24
- Inventor: Yasuo Tanaka
- Applicant: Yasuo Tanaka
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Rabin & Berdo, PC
- Priority: JP2005-288270 20050930
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/52 ; H01L23/48 ; H01L29/40
Abstract:
A method for manufacturing a semiconductor device includes providing a Zn system material directly on a copper terminal pad formed over an underlying base; disposing a Pb-free solder ball over the Zn system material; and performing a heating process for reflowing the Pb-free solder ball to thereby form a reactive product layer constituted of a component of the copper terminal pad and a component of the Zn system material between the copper terminal pad and the Pb-free solder ball.
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