Invention Grant
- Patent Title: Method for evaluating a semiconductor substrate
- Patent Title (中): 半导体基板的评价方法
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Application No.: US12037744Application Date: 2008-02-26
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Publication No.: US07947967B2Publication Date: 2011-05-24
- Inventor: Michio Tajima , Hiroki Sugimoto
- Applicant: Michio Tajima , Hiroki Sugimoto
- Applicant Address: JP Tokyo
- Assignee: Japan Aerospace Exploration Agency
- Current Assignee: Japan Aerospace Exploration Agency
- Current Assignee Address: JP Tokyo
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP.
- Priority: JP2007-045411 20070226
- Main IPC: G01N21/63
- IPC: G01N21/63 ; H01L21/66

Abstract:
A method for evaluating a semiconductor substrate is provided that can evaluate even a thin semiconductor substrate or a substrate with untreated surfaces, can evaluate a large quantity of semiconductor substrates for solar cells in a short time and can be used as in-line inspection in a production process of solar cells or the like. The method for evaluating a semiconductor substrate comprises a step of immersing a semiconductor substrate in an etching solution filled in a container, a step of irradiating the substrate being immersed in the etching solution with light via the etching solution to cause the substrate to emit photoluminescence, and a step of observing the emitted photoluminescence.
Public/Granted literature
- US20080213926A1 METHOD FOR EVALUATING A SEMICONDUCTOR SUBSTRATE Public/Granted day:2008-09-04
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