Invention Grant
US07947982B2 Thin film transistor matrix device including a plurality of thin film transistors arranged on the substrate 有权
薄膜晶体管矩阵器件包括布置在衬底上的多个薄膜晶体管

Thin film transistor matrix device including a plurality of thin film transistors arranged on the substrate
Abstract:
A thin film transistor matrix device including an insulating substrate, a plurality of thin film transistors (TFTs) on the insulating substrate, and a plurality of picture element electrodes (connected to the TFTs) on the insulating substrate in a matrix to define an image display region. A first conductor is on the insulating substrate. A first insulating film is on the first conductor, a second conductor is on the first insulating film, and a second insulating film is over the first insulating film and the second conductor. A first contact hole is formed in the first and second insulating films, a second contact hole is formed in the second insulating film, and a conducting connection is formed between the first and second contact holes. The first and second conductors are connected to the conducting connection via the first and second contact holes, respectively, which are both outside the image display region.
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