Invention Grant
US07947983B2 Thin film transistor matrix device including first and second conducting connections formed outside an image display region 有权
薄膜晶体管矩阵器件包括形成在图像显示区域外的第一和第二导电连接

Thin film transistor matrix device including first and second conducting connections formed outside an image display region
Abstract:
A thin film transistor matrix device including an insulating substrate, a plurality of thin film transistors (TFTs) on the insulating substrate, and a plurality of picture element electrodes on the insulating substrate in a matrix to define an image display region. A first conducting film is on the insulating substrate. A first insulating film is on the first conducting film. A second conducting film is on the first insulating film, and a second insulating film is over the first insulating film and the second conducting film. A first conducting connection is formed, outside the image display region, to pass through the first and second insulating films, and to electrically connect the first conducting film to a third conducting film. A second conducting connection is formed, outside the image display region, to pass through the second insulating film and to electrically connect the second conducting film to the third conducting film.
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