Invention Grant
- Patent Title: Thin film transistor array substrate and manufacturing method thereof
- Patent Title (中): 薄膜晶体管阵列基板及其制造方法
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Application No.: US12435773Application Date: 2009-05-05
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Publication No.: US07947985B2Publication Date: 2011-05-24
- Inventor: Dae-Cheol Kim , Woong-Kwon Kim , Sang-Youn Han , In-Woo Kim , Ho-Jun Lee , Byeong-Jae Ahn
- Applicant: Dae-Cheol Kim , Woong-Kwon Kim , Sang-Youn Han , In-Woo Kim , Ho-Jun Lee , Byeong-Jae Ahn
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2008-0055926 20080613; KR10-2008-0109513 20081105
- Main IPC: H01L27/14
- IPC: H01L27/14

Abstract:
A thin film transistor array substrate and its manufacturing method are disclosed. A thin film transistor (TFT) includes a gate electrode formed on a substrate, and source and drain electrodes formed on the gate electrode and separated from each other. A common line made of the same material as the gate electrode is formed on the substrate. A storage capacitor includes a storage electrode connected with a storage electrode line and a pixel electrode formed on the storage electrode. The storage electrode and the pixel electrode are formed by patterning a transparent conductive film, and accordingly, light can be transmitted through the region where the storage capacitor is formed to thus increase an aperture ratio.
Public/Granted literature
- US20090309101A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF Public/Granted day:2009-12-17
Information query
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