Invention Grant
- Patent Title: Insulated-gate bipolar transistor (IGBT)
- Patent Title (中): 绝缘栅双极晶体管（IGBT）
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Application No.: US12121045Application Date: 2008-05-15
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Publication No.: US07948005B2Publication Date: 2011-05-24
- Inventor: Mutsuhiro Mori , Taiga Arai
- Applicant: Mutsuhiro Mori , Taiga Arai
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2007-132051 20070517
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L31/111
Abstract:
A fourth semiconductor region of a first conduction type is provided in a partial region of a third semiconductor region of a second conduction type. This configuration enhances the blocking voltage at the time when the sheet carrier concentration of a fifth semiconductor region is enhanced.
Public/Granted literature
- US20080283867A1 SEMICONDUCTOR DEVICE Public/Granted day:2008-11-20
Information query
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