Invention Grant
- Patent Title: Power semiconductor module with flush terminal elements
- Patent Title (中): 具有齐平端子元件的功率半导体模块
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Application No.: US11403169Application Date: 2006-04-12
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Publication No.: US07948007B2Publication Date: 2011-05-24
- Inventor: Jürgen Steger , Yvonne Manz
- Applicant: Jürgen Steger , Yvonne Manz
- Applicant Address: DE Nuremberg
- Assignee: Semikron Elecktronik GmbH & Co. KG
- Current Assignee: Semikron Elecktronik GmbH & Co. KG
- Current Assignee Address: DE Nuremberg
- Agency: Lackenbach Siegel, LLP
- Agent Andrew F. Young, Esq.
- Priority: DE102005016650 20050412
- Main IPC: H01L23/02
- IPC: H01L23/02

Abstract:
A power semiconductor module includes a housing, terminal elements leading to the outside of the housing, an electrically insulated substrate arranged inside the housing, with the substrate being comprised of an insulating body and having on the first main face facing away from the base plate a plurality of connecting tracks electrically insulated from each other. The terminal and connecting elements are arranged on a connecting track in with contact faces contacting connecting tracks or power semiconductor components, with the individual contact faces having a plurality of partial contact faces. In one optional embodiment, each partial contact face has a maximum area of 20 mm2. In another embodiment, partial contact faces each are arranged at a distance of approximately 5 mm with regard to each other and the connection of the partial faces to the connecting tracks or the power semiconductor components is flush.
Public/Granted literature
- US20070235860A1 Power semiconductor module with flush terminal elements Public/Granted day:2007-10-11
Information query
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