Invention Grant
- Patent Title: N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor
- Patent Title (中): 氮化镓氮化镓/氮化镓增强型场效应晶体管
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Application No.: US11523286Application Date: 2006-09-18
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Publication No.: US07948011B2Publication Date: 2011-05-24
- Inventor: Siddharth Rajan , Chang Soo Suh , James S. Speck , Umesh K. Mishra
- Applicant: Siddharth Rajan , Chang Soo Suh , James S. Speck , Umesh K. Mishra
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A novel enhancement mode field effect transistor (FET), such as a High Electron Mobility Transistors (HEMT), has an N-polar surface uses polarization fields to reduce the electron population under the gate in the N-polar orientation, has improved dispersion suppression, and low gate leakage.
Public/Granted literature
- US20100264461A1 N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor Public/Granted day:2010-10-21
Information query
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