Invention Grant
US07948051B2 Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same
有权
用于制备自对准掩模的非光刻方法,由相同制备的制品和用于其的组合物
- Patent Title: Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same
- Patent Title (中): 用于制备自对准掩模的非光刻方法,由相同制备的制品和用于其的组合物
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Application No.: US12164599Application Date: 2008-06-30
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Publication No.: US07948051B2Publication Date: 2011-05-24
- Inventor: Matthew E Colburn , Stephen M Gates , Jeffrey C Hedrick , Elbert Huang , Satyanarayana V Nitta , Sampath Purushothaman , Muthumanickam Sankarapandian
- Applicant: Matthew E Colburn , Stephen M Gates , Jeffrey C Hedrick , Elbert Huang , Satyanarayana V Nitta , Sampath Purushothaman , Muthumanickam Sankarapandian
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ohlandt, Greeley, Ruggiero & Perle, LLP
- Agent Daniel P. Morris - IBM Atty.
- Main IPC: H01L21/70
- IPC: H01L21/70

Abstract:
A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.
Public/Granted literature
- US20080265415A1 Nonlithographic Method to Produce Self-Aligned Mask, Articles Produced by Same and Compositions for Same Public/Granted day:2008-10-30
Information query
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