Invention Grant
US07948051B2 Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same 有权
用于制备自对准掩模的非光刻方法,由相同制备的制品和用于其的组合物

Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same
Abstract:
A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.
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