Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12423914Application Date: 2009-04-15
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Publication No.: US07948053B2Publication Date: 2011-05-24
- Inventor: Yugo Ide , Minori Kajimoto
- Applicant: Yugo Ide , Minori Kajimoto
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-115359 20080425
- Main IPC: H01L29/00
- IPC: H01L29/00

Abstract:
A semiconductor device includes a first insulating film, paired resistance elements each of which includes a first conductive film formed on the first insulating film, a second insulating film formed on the first conductive film and a second conductive film formed on the second insulating film, paired first contact plugs formed on one of the resistance elements and arranged along a first direction, and paired second contact plugs formed on the other resistance. One of the resistance elements has a first width in a second direction perpendicular to the first direction, and a semiconductor region surrounded by an element isolation region has a second width. The first width is smaller than half of the second width. The second insulating films are spaced from each other by a first distance. The second conductive films are spaced from each other by a second distance. The second distance is longer than the first distance.
Public/Granted literature
- US20090267177A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2009-10-29
Information query
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