Invention Grant
US07948058B2 Semiconductor device and semiconductor integrated circuit device for driving plasma display using the semiconductor device
失效
半导体装置及使用该半导体装置驱动等离子体显示的半导体集成电路装置
- Patent Title: Semiconductor device and semiconductor integrated circuit device for driving plasma display using the semiconductor device
- Patent Title (中): 半导体装置及使用该半导体装置驱动等离子体显示的半导体集成电路装置
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Application No.: US12103911Application Date: 2008-04-16
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Publication No.: US07948058B2Publication Date: 2011-05-24
- Inventor: Kenji Hara , Junichi Sakano , Shinji Shirakawa
- Applicant: Kenji Hara , Junichi Sakano , Shinji Shirakawa
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2007-108802 20070418
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
A lateral IGBT structure having an emitter terminal including two or more base layers of a second conductivity-type for one collector terminal, in which the base layers of a second conductivity-type in emitter regions are covered with a first conductivity-type layer having a concentration higher than that of a drift layer so that a silicon layer between the first conductivity-type layer covering the emitter regions and a buried oxide film has a reduced resistance to increase current flowing to an emitter farther from the collector to thereby enhance the current density.
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