Invention Grant
- Patent Title: Integrated circuit structure
- Patent Title (中): 集成电路结构
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Application No.: US12165776Application Date: 2008-07-01
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Publication No.: US07948060B2Publication Date: 2011-05-24
- Inventor: Ken Williamson , Michael David May , Simon Christopher Dequin Clemow
- Applicant: Ken Williamson , Michael David May , Simon Christopher Dequin Clemow
- Applicant Address: GB London
- Assignee: XMOS Limited
- Current Assignee: XMOS Limited
- Current Assignee Address: GB London
- Agency: Sughrue Mion, PLLC
- Main IPC: H01L23/544
- IPC: H01L23/544

Abstract:
An integrated circuit and corresponding method of manufacture. The integrated circuit has a die comprising: an outer strengthening ring around a periphery of the die, the outer ring having one or more gaps; and an inner strengthening ring within the outer ring and around interior circuitry of the die, the inner ring having one or more gaps offset from the gaps of the outer ring. One or more conducting members are electrically isolated from said rings and electrically connected to the interior circuitry, each member passing through a gap of the inner ring and through a gap of the outer ring.
Public/Granted literature
- US20100001405A1 INTEGRATED CIRCUIT STRUCTURE Public/Granted day:2010-01-07
Information query
IPC分类: