Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
- Patent Title (中): 半导体装置及半导体装置的制造方法
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Application No.: US12339695Application Date: 2008-12-19
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Publication No.: US07948062B2Publication Date: 2011-05-24
- Inventor: Kozo Makiyama , Toshihiro Ohki , Masahito Kanamura , Toshihide Kikkawa
- Applicant: Kozo Makiyama , Toshihiro Ohki , Masahito Kanamura , Toshihide Kikkawa
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2007-341176 20071228
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/58
Abstract:
A semiconductor device including a compound semiconductor laminated structure having a plurality of compound semiconductor layers formed over a semiconductor substrate, a first insulation film covering at least a part of a surface of the compound semiconductor laminated structure, and a second insulation film formed on the first insulation film, wherein the second insulation film includes more hydrogen than the first insulation film.
Public/Granted literature
- US20090166815A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2009-07-02
Information query
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