Invention Grant
- Patent Title: Carbon nanotube structure, a semiconductor device, a semiconductor package and a manufacturing method of a semiconductor device
- Patent Title (中): 碳纳米管结构,半导体器件,半导体封装以及半导体器件的制造方法
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Application No.: US11041891Application Date: 2005-01-25
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Publication No.: US07948081B2Publication Date: 2011-05-24
- Inventor: Akio Kawabata , Mizuhisa Nihei , Masahiro Horibe
- Applicant: Akio Kawabata , Mizuhisa Nihei , Masahiro Horibe
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2004-292843 20041005
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
A semiconductor device uses a carbon nanotube structure, which reduces an electric resistance and a thermal resistance by increasing a density of the carbon nanotubes. An insulation film covers a first electrically conductive material. A second electrically conductive material is provided on the insulation film. A plurality of carbon nanotubes extend through the insulation film by being filled in an opening part that exposes the first electrically conductive material. The carbon nanotubes electrically connect the first electrically conductive material and the second electrically conductive material to each other. Ends of the carbon nanotubes are fixed to a recessed part provided on a surface of the first electrically conductive material.
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