Invention Grant
- Patent Title: Dielectric material with a reduced dielectric constant and methods of manufacturing the same
- Patent Title (中): 具有降低的介电常数的介电材料及其制造方法
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Application No.: US11928913Application Date: 2007-10-30
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Publication No.: US07948084B2Publication Date: 2011-05-24
- Inventor: Louis Lu-Chen Hsu , Jack Allan Mandelman , Chih-Chao Yang
- Applicant: Louis Lu-Chen Hsu , Jack Allan Mandelman , Chih-Chao Yang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Dugan & Dugan, PC
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
In a first aspect, a first method of manufacturing a dielectric material with a reduced dielectric constant is provided. The first method includes the steps of (1) forming a dielectric material layer including a trench on a substrate; and (2) forming a cladding region in the dielectric material layer by forming a plurality of air gaps in the dielectric material layer along at least one of a sidewall and a bottom of the trench so as to reduce an effective dielectric constant of the dielectric material. Numerous other aspects are provided.
Public/Granted literature
- US20080054487A1 DIELECTRIC MATERIAL WITH A REDUCED DIELECTRIC CONSTANT AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2008-03-06
Information query
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