Invention Grant
- Patent Title: Measurement apparatus, test system, and measurement method for measuring a characteristic of a device
- Patent Title (中): 测量装置,测试系统和用于测量装置特性的测量方法
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Application No.: US12343507Application Date: 2008-12-24
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Publication No.: US07948256B2Publication Date: 2011-05-24
- Inventor: Yasuo Furukawa
- Applicant: Yasuo Furukawa
- Applicant Address: JP Tokyo
- Assignee: Advantest Corporation
- Current Assignee: Advantest Corporation
- Current Assignee Address: JP Tokyo
- Agency: Jianq Chyun IP Office
- Main IPC: G01R31/02
- IPC: G01R31/02 ; G01R27/08

Abstract:
A measurement apparatus that detects a defect in a device based on the quiescent current (IDDQ) of a CMOS LSI or the like detects the defect by measuring the value of IDDQ that flows when a logic vector is applied. However, the miniaturization of CMOS LSIs has caused an increase in the leak current flowing through a normal CMOS circuit. This makes it difficult to distinguish between the power supply current flowing in a defective CMOS circuit and the leak current flowing through a normal CMOS circuit. By applying the logic vector after suppressing the fluctuation of the leak current by controlling the power supply voltage applied to the device under measurement and the voltage applied to the substrate of the device under measurement, the measurement apparatus of the present invention can measure the power supply current flowing through a defective CMOS circuit to detect the defect in the CMOS circuit.
Public/Granted literature
- US20100066392A1 MEASUREMENT EQUIPMENT, TEST SYSTEM, AND MEASUREMENT METHOD Public/Granted day:2010-03-18
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