Invention Grant
US07948571B2 Semiconductor device having thin film transistor with particular drain electrode structure
有权
具有具有特定漏电极结构的薄膜晶体管的半导体器件
- Patent Title: Semiconductor device having thin film transistor with particular drain electrode structure
- Patent Title (中): 具有具有特定漏电极结构的薄膜晶体管的半导体器件
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Application No.: US12358617Application Date: 2009-01-23
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Publication No.: US07948571B2Publication Date: 2011-05-24
- Inventor: Hisashi Ohtani , Yasushi Ogata
- Applicant: Hisashi Ohtani , Yasushi Ogata
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP09-095069 19970328
- Main IPC: G02F1/136
- IPC: G02F1/136 ; G02F1/1343 ; G02F1/1333 ; H01L21/02 ; H01L27/14

Abstract:
A first insulating thin film having a large dielectric constant such as a silicon nitride film is formed so as to cover a source line and a metal wiring that is in the same layer as the source line. A second insulating film that is high in flatness is formed on the first insulating film. An opening is formed in the second insulating film by etching the second insulating film, to selectively expose the first insulating film. A conductive film to serve as a light-interruptive film is formed on the second insulating film and in the opening, whereby an auxiliary capacitor of the pixel is formed between the conductive film and the metal wiring with first the insulating film serving as a dielectric. The effective aperture ratio can be increased by forming the auxiliary capacitor in a selected region where the influences of alignment disorder of liquid crystal molecules, i.e., disclination, are large.
Public/Granted literature
- US20090134395A1 ACTIVE MATRIX LIQUID CRYSTAL DISPLAY DEVICE Public/Granted day:2009-05-28
Information query
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