Invention Grant
- Patent Title: Composite integrated semiconductor device
- Patent Title (中): 复合集成半导体器件
-
Application No.: US12071604Application Date: 2008-02-22
-
Publication No.: US07948725B2Publication Date: 2011-05-24
- Inventor: Shin Kiuchi , Kazuhiko Yoshida , Takeshi Ichimura , Naoki Yaezawa , Shoichi Furuhata
- Applicant: Shin Kiuchi , Kazuhiko Yoshida , Takeshi Ichimura , Naoki Yaezawa , Shoichi Furuhata
- Applicant Address: JP Tokyo
- Assignee: Fuji Electric Systems Co., Ltd.
- Current Assignee: Fuji Electric Systems Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Staas & Halsey LLP
- Priority: JP2001-269773 20010906
- Main IPC: H02H9/00
- IPC: H02H9/00

Abstract:
A composite integrated semiconductor device. In one embodiment, an input surge/noise absorbing circuit absorbs surge from an input signal, an attenuating circuit attenuates the input signal, and an electrical signal converting circuit converts the input signal to an output signal. The input surge/noise absorbing circuit, the attenuating circuit, and the electrical signal converting circuit together form a unit, and a plurality of these units are arranged in parallel in one semiconductor substrate to form the composite integrated semiconductor device, resulting in a reduction in the number of discrete components mounted on a printed circuit board.
Public/Granted literature
- US20080285188A1 Composite integrated semiconductor device Public/Granted day:2008-11-20
Information query