Invention Grant
- Patent Title: Resistance variable element, nonvolatile switching element, and resistance variable memory apparatus
- Patent Title (中): 电阻可变元件,非易失性开关元件和电阻变量存储装置
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Application No.: US12304075Application Date: 2008-03-27
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Publication No.: US07948789B2Publication Date: 2011-05-24
- Inventor: Shunsaku Muraoka , Koichi Osano , Satoru Fujii
- Applicant: Shunsaku Muraoka , Koichi Osano , Satoru Fujii
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2007-101506 20070409
- International Application: PCT/JP2008/000768 WO 20080327
- International Announcement: WO2008/126366 WO 20081023
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A resistance variable element comprises a first electrode (2), a second electrode (4), and a resistance variable layer (3) which is disposed between the first electrode and the second electrode, and electrically connected to the first electrode and the second electrode, wherein the resistance variable layer comprises material including TaOX (1.6≦X≦2.2), an electric resistance between the first electrode and the second electrode is lowered by application of a first voltage pulse having a first voltage between the first electrode and the second electrode, and the electric resistance between the first electrode and the second electrode is increased by application of a second voltage pulse having a second voltage of the same polarity as the first voltage, between the first electrode and the second electrode.
Public/Granted literature
- US20100232204A1 RESISTANCE VARIABLE ELEMENT, NONVOLATILE SWITCHING ELEMENT, AND RESISTANCE VARIABLE MEMORY APPARATUS Public/Granted day:2010-09-16
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