Invention Grant
US07948789B2 Resistance variable element, nonvolatile switching element, and resistance variable memory apparatus 有权
电阻可变元件,非易失性开关元件和电阻变量存储装置

Resistance variable element, nonvolatile switching element, and resistance variable memory apparatus
Abstract:
A resistance variable element comprises a first electrode (2), a second electrode (4), and a resistance variable layer (3) which is disposed between the first electrode and the second electrode, and electrically connected to the first electrode and the second electrode, wherein the resistance variable layer comprises material including TaOX (1.6≦X≦2.2), an electric resistance between the first electrode and the second electrode is lowered by application of a first voltage pulse having a first voltage between the first electrode and the second electrode, and the electric resistance between the first electrode and the second electrode is increased by application of a second voltage pulse having a second voltage of the same polarity as the first voltage, between the first electrode and the second electrode.
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