Invention Grant
- Patent Title: Temperature compensation in memory devices and systems
- Patent Title (中): 存储器件和系统中的温度补偿
-
Application No.: US12209947Application Date: 2008-09-12
-
Publication No.: US07948793B2Publication Date: 2011-05-24
- Inventor: John David Porter , Jennifer E. Taylor
- Applicant: John David Porter , Jennifer E. Taylor
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
Devices, methods, and systems for temperature compensation in memory devices, such as resistance variable memory, among other types of memory are included. A memory device can include a table with an output that is used to create a multiplication factor for a current to compensate for temperature changes in the memory device, where the output depends on an operating temperature of the memory device and a difference in the current between a highest specified operating temperature and a lowest specified operating temperature of the memory device.
Public/Granted literature
- US20100067287A1 TEMPERATURE COMPENSATION IN MEMORY DEVICES AND SYSTEMS Public/Granted day:2010-03-18
Information query