Invention Grant
US07948819B2 Integrated circuit having a memory with process-voltage-temperature control
有权
具有具有过程电压 - 温度控制的存储器的集成电路
- Patent Title: Integrated circuit having a memory with process-voltage-temperature control
- Patent Title (中): 具有具有过程电压 - 温度控制的存储器的集成电路
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Application No.: US11860891Application Date: 2007-09-25
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Publication No.: US07948819B2Publication Date: 2011-05-24
- Inventor: Mathew R. Henry , Douglas D. Lopata , Richard J. McPartland , Hai Quang Pham , Wayne E. Werner
- Applicant: Mathew R. Henry , Douglas D. Lopata , Richard J. McPartland , Hai Quang Pham , Wayne E. Werner
- Applicant Address: US PA Allentown
- Assignee: Agere Systems Inc.
- Current Assignee: Agere Systems Inc.
- Current Assignee Address: US PA Allentown
- Agency: Mendelsohn, Drucker & Associates, P.C.
- Agent Yuri Gruzdkov; Steve Mendelsohn
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C8/18 ; G11C7/04 ; G11C7/02

Abstract:
Certain embodiments of the inventions provide an integrated circuit (IC) having a processor operatively coupled to a PVT (process-voltage-temperature) source and an adjustable memory. The processor receives from the source an input characterizing the present PVT condition and generates a command for the memory based on that input. In response to the command, the memory adjusts its internal circuit structure, clock speed, and/or operating voltage(s) to optimize its performance for the present PVT condition. Advantageously, the ability to adjust the memory so that it can maintain its functionality and deliver an acceptable level of performance under unfavorable PVT conditions provides additional flexibility in choosing circuit design options, which can produce area savings and/or increase the yield of acceptable ICs during manufacture.
Public/Granted literature
- US20080117702A1 INTEGRATED CIRCUIT HAVING A MEMORY WITH PROCESS-VOLTAGE-TEMPERATURE CONTROL Public/Granted day:2008-05-22
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