Invention Grant
US07948819B2 Integrated circuit having a memory with process-voltage-temperature control 有权
具有具有过程电压 - 温度控制的存储器的集成电路

Integrated circuit having a memory with process-voltage-temperature control
Abstract:
Certain embodiments of the inventions provide an integrated circuit (IC) having a processor operatively coupled to a PVT (process-voltage-temperature) source and an adjustable memory. The processor receives from the source an input characterizing the present PVT condition and generates a command for the memory based on that input. In response to the command, the memory adjusts its internal circuit structure, clock speed, and/or operating voltage(s) to optimize its performance for the present PVT condition. Advantageously, the ability to adjust the memory so that it can maintain its functionality and deliver an acceptable level of performance under unfavorable PVT conditions provides additional flexibility in choosing circuit design options, which can produce area savings and/or increase the yield of acceptable ICs during manufacture.
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