Invention Grant
- Patent Title: Via density change to improve wafer surface planarity
- Patent Title (中): 通过密度变化来提高晶片表面平面度
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Application No.: US12183313Application Date: 2008-07-31
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Publication No.: US07949981B2Publication Date: 2011-05-24
- Inventor: Stephen E. Greco
- Applicant: Stephen E. Greco
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffman Warnick LLC
- Agent Katherine S. Brown
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F19/00

Abstract:
Changing a via density for viafill vias to improve wafer surface planarity for later photolithography is provided, in one embodiment, by obtaining a circuit design including a plurality of viafill vias having differing via density across the circuit design, each viafill via interconnecting non-functional metal fill shapes in different layers of the circuit design; selecting a region of the circuit design to evaluate using an evaluation window; determining a via density within the evaluation window; and changing a number of viafill vias within the region in the circuit design in response to the via density being different than a threshold via density that is selected such that a coating deposited over the plurality of vias presents a substantially planar surface.
Public/Granted literature
- US20100031221A1 VIA DENSITY CHANGE TO IMPROVE WAFER SURFACE PLANARITY Public/Granted day:2010-02-04
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