Invention Grant
- Patent Title: Semiconductor light emitting element and method for manufacturing semiconductor light emitting device
- Patent Title (中): 半导体发光元件及半导体发光元件的制造方法
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Application No.: US12518388Application Date: 2008-02-19
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Publication No.: US07951625B2Publication Date: 2011-05-31
- Inventor: Hidenori Kamei
- Applicant: Hidenori Kamei
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2007-040236 20070221
- International Application: PCT/JP2008/000269 WO 20080219
- International Announcement: WO2008/102548 WO 20080828
- Main IPC: H01L33/52
- IPC: H01L33/52 ; H01L33/00

Abstract:
In a semiconductor light emitting device, light is lost from a side surface of a substrate; therefore, if a substrate side surface occupies a large area, it decreases light extraction efficiency. The area of the substrate side surface may be reduced by reducing a thickness of the substrate. However, a thin substrate has low mechanical strength and is cracked by a stress during work process, and that decreases the yield.A light emitting layer is formed on a substrate. After fixed to a grinding board with wax, the substrate is ground to thin. A support substrate is then bonded to the substrate for reinforcement. The substrate is fixed to an electrode and others, with the support substrate bonded to the substrate. The support substrate is lastly removed.
Public/Granted literature
- US20100047939A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2010-02-25
Information query
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