Invention Grant
- Patent Title: Method for fabricating a semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US12326285Application Date: 2008-12-02
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Publication No.: US07951655B2Publication Date: 2011-05-31
- Inventor: Joong Sik Kim
- Applicant: Joong Sik Kim
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2008-0049892 20080528
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84
Abstract:
A method for fabricating a semiconductor device comprises: performing a thermal process to expanding a local doped region formed between gate patterns on a semiconductor substrate; and etching a central region of an expanded local doped region so that the expanded local doped region remains at the total area of sidewalls of floating bodies isolated from each other.
Public/Granted literature
- US20090294851A1 Semiconductor Device and Method for Fabricating the Same Public/Granted day:2009-12-03
Information query
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